Sensitivity to pressure and light of a depletionmode field-effect transistor

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Akmal Turayev

Аннотация

There are presented the results of experimental investigation ofsensitivity of field effect transistor in two-terminal connection mode withpinched-off channel to the impact of pressure and light. It is shown that thedepletion-mode field effect transistor has a high sensitivity to pressure andlight.

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Как цитировать
Turayev, A. (2024). Sensitivity to pressure and light of a depletionmode field-effect transistor . Центр Научных Публикаций (buxdu.Uz), 47(47). извлечено от https://journal.buxdu.uz/index.php/journals_buxdu/article/view/12109
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Статьи buxdu.uz

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